IndiumV3, Main, Repository, bibRecord, 00A811

Low temperature InP/Si wafer bonding

Identifieur interne : 00A811 ( Main/Repository ); précédent : 00A810; suivant : 00A812

Low temperature InP/Si wafer bonding

Auteurs : RBID : Pascal:04-0055912

Descripteurs français

Pascal (Inist)
- 6835M, 8165C, 8105E, 8140G, 8280M, Etude expérimentale, Indium composé, Silicium, Semiconducteur III-V, Semiconducteur élémentaire, Fixation pastille, Traitement par plasma, Gravure pulvérisation, Energie liaison, Recuit, Energie surface, Hydrogène, Absorption, Spectre SIMS.
Wicri :
- concept : Hydrogène.

English descriptors

KwdEn :
- Absorption, Annealing, Binding energy, Elemental semiconductors, Experimental study, Hydrogen, III-V semiconductors, Indium compounds, Plasma assisted processing, Secondary ion mass spectra, Silicon, Sputter etching, Surface energy, Wafer bonding.

Abstract

An oxide-free, covalently bonded interface of InP/silicon wafer pairs has been realized at low temperature by B₂H₆ plasma treatment of bonding surfaces in the reactive ion etch mode followed by a HF dip and room temperature bonding in air. The bonding energy reaches InP fracture surface energy of 630 mJ/m2 at 200°C. A total B-doped amorphous layer of about 15 Å with peak concentration of ∼2×10²⁰ cm^-3 was detected at the bonding interface. The release of hydrogen at low temperature from B-H complexes and subsequent absorption of the atomic hydrogen by the amorphous layer at the bonding interface is most likely responsible for the enhanced bonding energy. © 2004 American Institute of Physics.

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Pascal:04-0055912

Le document en format XML

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<author><name sortKey="Tong, Q Y" uniqKey="Tong Q">Q.-Y. Tong</name>
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<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Caroline du Nord</region>
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<wicri:cityArea>Ziptronix Inc., 800 Perimeter Park, Morrisville</wicri:cityArea>
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<author><name sortKey="Gan, Q" uniqKey="Gan Q">Q. Gan</name>
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<author><name sortKey="Hudson, G" uniqKey="Hudson G">G. Hudson</name>
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<author><name sortKey="Fountain, G" uniqKey="Fountain G">G. Fountain</name>
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<author><name sortKey="Enquist, P" uniqKey="Enquist P">P. Enquist</name>
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<term>Hydrogen</term>
<term>III-V semiconductors</term>
<term>Indium compounds</term>
<term>Plasma assisted processing</term>
<term>Secondary ion mass spectra</term>
<term>Silicon</term>
<term>Sputter etching</term>
<term>Surface energy</term>
<term>Wafer bonding</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>6835M</term>
<term>8165C</term>
<term>8105E</term>
<term>8140G</term>
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<term>Etude expérimentale</term>
<term>Indium composé</term>
<term>Silicium</term>
<term>Semiconducteur III-V</term>
<term>Semiconducteur élémentaire</term>
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<front><div type="abstract" xml:lang="en">An oxide-free, covalently bonded interface of InP/silicon wafer pairs has been realized at low temperature by B<sub>2</sub>
H<sub>6</sub>
 plasma treatment of bonding surfaces in the reactive ion etch mode followed by a HF dip and room temperature bonding in air. The bonding energy reaches InP fracture surface energy of 630 mJ/m2 at 200°C. A total B-doped amorphous layer of about 15 Å with peak concentration of ∼2×10<sup>20</sup>
 cm<sup>-3</sup>
 was detected at the bonding interface. The release of hydrogen at low temperature from B-H complexes and subsequent absorption of the atomic hydrogen by the amorphous layer at the bonding interface is most likely responsible for the enhanced bonding energy. © 2004 American Institute of Physics.</div>
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 plasma treatment of bonding surfaces in the reactive ion etch mode followed by a HF dip and room temperature bonding in air. The bonding energy reaches InP fracture surface energy of 630 mJ/m2 at 200°C. A total B-doped amorphous layer of about 15 Å with peak concentration of ∼2×10<sup>20</sup>
 cm<sup>-3</sup>
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Low temperature InP/Si wafer bonding

Low temperature InP/Si wafer bonding

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri